Highly Material Selective and Self‐Aligned Photo‐assisted Atomic Layer Deposition of Copper on Oxide Materials
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چکیده
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Surface and interface processes during atomic layer deposition of copper on silicon oxide.
The initial surface chemistry and growth mechanisms of the atomic layer deposition (ALD) of metallic copper on SiO(2) surfaces are investigated using an amidinate precursor (copper(I) di-sec-butylacetamidinate, [Cu((s)Bu-amd)](2)) and molecular hydrogen. Using in situ Fourier transform infrared spectroscopy together with calculations based on density functional theory, we show that the initial ...
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ژورنال
عنوان ژورنال: Advanced Materials Interfaces
سال: 2021
ISSN: 2196-7350,2196-7350
DOI: 10.1002/admi.202100014